收藏本站
NTF5P03, NVF5P03
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 24 Vdc, V GS = 0 Vdc)
(V DS = ? 24 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
? 30
?
?
?
?
?
? 28
?
?
?
?
?
? 1.0
? 25
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(V DS = V GS , I D = ? 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
(V GS = ? 10 Vdc, I D = ? 5.2 Adc)
(V GS = ? 4.5 Vdc, I D = ? 2.6Adc)
Forward Transconductance (Note 2)
(V DS = ? 15 Vdc, I D = ? 2.0 Adc)
V GS(th)
R DS(on)
g fs
? 1.0
?
?
2.0
? 1.75
3.5
76
107
3.9
? 3.0
?
100
150
?
Vdc
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = ? 25 Vdc, V GS = 0 V,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
500
153
58
950
440
140
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = ? 15 Vdc, I D = ? 4.0 Adc,
V GS = ? 10 Vdc,
R G = 6.0 W ) (Note 2)
(V DD = ? 15 Vdc, I D = ? 2.0 Adc,
V GS = ? 10 Vdc,
R G = 6.0 W ) (Note 2)
(V DS = ? 24 Vdc, I D = ? 4.0 Adc,
V GS = ? 10 Vdc) (Note 2)
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q T
Q 1
?
?
?
?
?
?
?
?
?
?
10
33
38
20
16
45
23
24
15
1.6
24
48
94
92
38
110
60
80
38
?
ns
ns
nC
Q 2
Q3
?
?
3.5
2.6
?
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
(I S = ? 4.0 Adc, V GS = 0 Vdc)
(I S = ? 4.0 Adc, V GS = 0 Vdc,
T J = 125 ° C) (Note 2)
(I S = ? 4.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 2)
V SD
t rr
t a
?
?
?
?
? 1.1
? 0.89
34
20
? 1.5
?
?
?
Vdc
ns
t b
?
14
?
Reverse Recovery Stored Charge
Q RR
?
0.036
?
m C
Cpk +
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values. Max limit * Typ
3 SIGMA
http://onsemi.com
3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NVMFD5877NLT1G MOSFET N-CH 60V 17A 8SOIC
NVMFS4841NT1G MOSFET N-CH 30V 89A SO-8FL
NVMFS5844NLT1G MOSFET N-CH 60V 11.2S SO-8FL
NVR1P02T1G MOSFET N-CH 20V 1A SOT-23-3
NVTFS4823NTAG MSOFET N-CH 30V 30A 8WDFN
NVTFS4824NTAG MOSFET N-CH 30V 18.2A 8WDFN
NVTFS5116PLTWG MOSFET P-CH 60V 14A 8WDFN
NVTFS5811NLTAG MOSFET N-CH 40V 40A 8WDFN
相关代理商/技术参数
NVF6P02T3G 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVF9 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc
NVF9AZ15ADC12V 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc
NVF9AZ15ADC24V 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc
NVF9AZ15ADC6V 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc
NVF9AZ30ADC12V 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc
NVF9AZ30ADC24V 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc
NVF9AZ30ADC6V 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:Suitable for automation system and automobile auxiliary etc